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| NPN Silicon RF Transistor q q q BF 959 For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages For oscillator applications Type BF 959 Marking - Ordering Code Q62702-F640 Pin Configuration 1 2 3 C E B Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter reverse voltage Collector-base voltage Emitter-base voltage Peak collector current Peak base current Total power dissipation, TA 25 C VCE 15 V Junction temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VCE0 VCES VCB0 VEB0 ICM IBM Ptot Tj Tstg Values 20 30 30 3 100 30 500 150 - 55 ... + 150 Unit V mA mW C 250 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 BF 959 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA Collector-base breakdown voltage IC = 10 A Emitter-base breakdown voltage IE = 10 A Collector cutoff current V = 20 V DC current gain, VCE = 10 V IC = 5 mA IC = 20 mA Base-emitter voltage IC = 20 mA, VCE = 10 V Collector-emitter saturation voltage IC = 30 mA, IB = 2 mA Base-emitter saturation voltage IC = 30 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz IC = 30 mA, VCE = 5 V Output capacitance VCB = 10 V, IE = 0, f = 1 MHz Collector-base capacitance VCE = 10 V, VBE = 0, f = 1 MHz Noise figure VCE = 10 V, f = 200 MHz, RS = 60 IC = 5 mA IC = 20 mA Output conductance IC = 20 mA, VCE = 10 V, f = 35 MHz fT 700 600 Cobo Ccb F - - g22e - 3 4 0.06 - - - mS - - 1100 - 0.9 0.75 - - - - dB pF MHz V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE 35 40 VBE VCE sat VBE sat - - - - 85 0.75 - - - - - 1 0.95 V 20 30 3 - - - - - - - - 100 nA - V Values typ. max. Unit Semiconductor Group 2 BF 959 Total power dissipation Ptot = f (TA) Transition frequency fT = f (IC) f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Semiconductor Group 3 |
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